- Clean wafer backside after polish, to remove Si powder and SiO2.
- The main application：
1. The wafer backside needs to be coated with a metal film and removed Si powder/SiO2 completely. Should be micro-etched with a small amount of diluted HF, then cleaned with pure water.
2. For wafer of small-sized dies, to increase the adhesion between die and dicing tape. Only clean with pure water to remove more than 90% Si powder/SiO2 and it can avoid wafer cutting and cleaving.
- Programmable multi-axis swing-arm system.
- Pure water can be atomized to 7~9um.。
- Different product carrier design, such as wafer form、Frame form、Panel form.
- Matched all Equipment Front End Module (EFEM).
- Option：Acid-mixed system、thermostat system and chemical recycled system.
- Special explosion-proof safety device and design.
- SEMI-S2 certification.
- Equipment model：1-chamber、2-chamber and 4-chamber.
- 2"、4"、6"、8" and 12".